This inventor holds 1 USPTO granted patent. Top assignee: Micron Technology Incorporated. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: David M Guzman: Innovator in Antimony-Gallium-Zinc-Oxide Materials
Introduction
David M Guzman is a notable inventor based in Boise, ID (US). He has made significant contributions to the field of materials science, particularly in the development of advanced semiconductor materials. His work focuses on enhancing the performance of transistors through innovative materials.
Latest Patents
David holds a patent for "Antimony-gallium-zinc-oxide materials." This patent describes systems, methods, and apparatus for transistors that feature a first source/drain region, a second source/drain region, and a channel region. The channel region comprises an antimony-gallium-zinc-oxide (SbGZO) material, which has the potential to improve the efficiency and effectiveness of electronic devices.
Career Highlights
David is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His role involves research and development of innovative materials that can be utilized in various electronic applications. His expertise in materials science has positioned him as a valuable asset to his team.
Collaborations
David has collaborated with talented coworkers, including Adharsh Rajagopal and Scott E Sills. These collaborations have fostered a creative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
David M Guzman is a pioneering inventor whose work in antimony-gallium-zinc-oxide materials is shaping the future of semiconductor technology. His contributions are essential for the ongoing development of efficient electronic devices.