The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Apr. 04, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Adharsh Rajagopal, Boise, ID (US);
Scott E. Sills, Boise, ID (US);
Sumeet C. Pandey, Meridian, ID (US);
David M. Guzman, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/80 (2025.01); H10B 12/00 (2023.01); H10D 30/67 (2025.01); H10D 99/00 (2025.01); H10P 14/20 (2026.01); H10P 14/22 (2026.01); H10P 14/24 (2026.01);
U.S. Cl.
CPC ...
H10D 62/80 (2025.01); H10B 12/00 (2023.02); H10D 30/6755 (2025.01); H10D 99/00 (2025.01); H10P 14/22 (2026.01); H10P 14/24 (2026.01); H10P 14/3434 (2026.01);
Abstract
Systems, methods and apparatus are provided for transistors having a first source/drain region, a second source/drain region, and a channel region, wherein the channel region comprises an antimony-gallium-zinc-oxide (SbGZO) material.