David Jacy

Title: **David Jacy: Innovator in Bonded Substrate Structures**

Introduction

David Jacy, an inventive mind based in San Jose, California, has made significant strides in the field of material fabrication. With a focus on bonded substrate structures, his work has the potential to influence various applications, particularly in the semiconductor industry.

Latest Patents

David Jacy holds a patent for a novel method and structure for fabricating bonded substrate structures using thermal processing to effectively remove oxygen species. This patent outlines a technique for creating silicon-on-silicon bonded structures. The method involves providing a thickness of single crystal silicon material that is transferred from a first silicon substrate to a second silicon substrate. It includes a thermal process that alters the interface region characteristics, leading to the creation of an epitaxially formed silicon material that is free from silicon oxide, ultimately facilitating electrical coupling between the silicon materials.

Career Highlights

Jacy's tenure at Silicon Genesis Corporation has been marked by innovative research and development of advanced bonding techniques. His contribution to bonded substrate structures showcases his capabilities as an inventor and his commitment to advancing semiconductor technology.

Collaborations

Throughout his career, David has collaborated with industry professionals, including Francois J. Henley and James Andrew Sullivan. These partnerships have driven forward the research initiatives and have been instrumental in refining the technologies and methods that Jacy has patented.

Conclusion

David Jacy exemplifies the spirit of innovation within the technology sector. With his focused research on bonded substrate structures and his patent's implications for the semiconductor industry, he continues to pave the way for future advancements in material fabrication. His contributions are a testament to the transformative power of inventive thinking in modern technology.