East Hardwick, VT, United States of America

David G Brochu, Jr

USPTO Granted Patents = 4 

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Hardwick, VT (US) (2014)
  • East Hardwick, VT (US) (2013 - 2018)

Company Filing History:


Years Active: 2013-2018

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4 patents (USPTO):

Title: Innovator David G Brochu, Jr: Pioneering Advances in Semiconductor Technology

Introduction: David G Brochu, Jr, an accomplished inventor based in East Hardwick, Vermont (US), has made significant contributions to the field of semiconductor technology. With a portfolio of four patents, his work focuses on enhancing the reliability and efficiency of dielectric materials and semiconductor devices.

Latest Patents: Among his latest innovations, Brochu’s patents include "Test Structures for Dielectric Reliability Evaluations" and "Dual L-Shaped Drift Regions in an LDMOS Device and Method of Making the Same." The first patent presents advanced methods and test structures designed to evaluate the reliability of dielectric materials. It incorporates a carefully designed test structure that features rows of contacts and a conductor, ensuring precise measurements of dielectric performance.

The second patent describes a novel semiconductor device with dual L-shaped drift regions, significantly improving voltage handling and operational efficiency compared to traditional designs. This innovative technology integrates silicon-germanium (SiGe) characteristics with Lateral Diffused Metal Oxide Semiconductor (LDMOS) strategies, offering a more compact solution for modern electronic applications.

Career Highlights: Throughout his career, David has been associated with high-profile organizations such as IBM and Globalfoundries Inc. His work in these companies has allowed him to develop advanced semiconductor technologies, enhancing performance and reliability in various electronic devices.

Collaborations: During his professional journey, David Brochu has collaborated with esteemed colleagues, including Travis S Merrill and Roger Aime Dufresne. Their combined expertise in semiconductor technologies has undoubtedly contributed to the innovation and development of cutting-edge solutions in the field.

Conclusion: David G Brochu, Jr stands out as a key inventor in semiconductor technology, with a focus on improving dielectric reliability and LDMOS designs. His patents reflect a dedication to pushing the boundaries of what's possible in electronics, making a lasting impact in the industry. As technology continues to evolve, Brochu's contributions will be vital in shaping the future of semiconductor devices.

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