The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jul. 11, 2013
International Business Machines Corporation, Armonk, NY (US);
David G. Brochu, Jr., East Hardwick, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Michael J. Hauser, Bolton, VT (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Xuefeng Liu, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device comprising dual L-shaped drift regions in a lateral diffused metal oxide semiconductor (LDMOS) and a method of making the same. The LDMOS in the semiconductor device comprises a trench isolation region or a deep trench encapsulated by a liner, a first L-shaped drift region, and a second L-shaped drift region. The LDMOS comprising the dual L-shape drift regions is integrated with silicon-germanium (SiGe) technology. The LDMOS comprising the dual L-shape drift regions furnishes a much higher voltage drop in a lateral direction within a much shorter distance from a drain region than the traditional LDMOS does.