Plano, TX, United States of America

David B Spratt


Average Co-Inventor Count = 2.9

ph-index = 11

Forward Citations = 272(Granted Patents)


Company Filing History:


Years Active: 1986-2003

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19 patents (USPTO):Explore Patents

Title: David B. Spratt: A Pioneer in Bipolar Junction Transistor Technology

Introduction

David B. Spratt is an accomplished inventor based in Plano, TX, USA, known for his innovative contributions to semiconductor technology. With a total of 19 patents to his name, Spratt has made significant strides in the field of bipolar junction transistors and integrated circuit design.

Latest Patents

Two of David B. Spratt's latest patents showcase his expertise in CMOS technology. The first patent, titled "Method of manufacturing a high gain bipolar junction transistor with counterdoped base in CMOS technology," describes a method for forming a high-gain bipolar junction transistor within an optimized CMOS integrated circuit. This invention is notable for its use of a compensated base region, which is formed by integrating p-well and n-well regions in a common substrate.

The second patent, "On-chip ESD protection in dual voltage CMOS," addresses the challenges posed by electrostatic discharge (ESD) in dual voltage chips. In this innovation, the N-type high-voltage transistors, which are integral to the ESD protection circuit, utilize thicker gate oxide and receive the same channel doping and drain extender doping as core transistors. This feature enables these transistors to generate a high substrate current during an ESD event, thereby triggering the protection circuit effectively.

Career Highlights

Throughout his career, David B. Spratt has worked with notable companies, such as Texas Instruments Corporation. His work in semiconductor technology has established him as a respected figure in the industry, contributing to advancements that have significant implications for the performance and reliability of electronic devices.

Collaborations

David B. Spratt has collaborated with several esteemed colleagues, including Eldon J. Zorinsky and Robert L. Virkus. Together, they have worked on groundbreaking projects that have enhanced the capabilities of semiconductor technology and have laid the groundwork for future innovations.

Conclusion

David B. Spratt's contributions to the field of semiconductor technology through his numerous patents exemplify his innovative spirit and technical prowess. His work in bipolar junction transistors and ESD protection continues to influence the design and functionality of modern electronic devices, making him a pivotal figure in the realm of technological advancements.

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