Texas Instruments Corporation

Instruments Incorporated

David B Spratt

Eldon J Zorinsky

Robert L Virkus

Robert H Eklund

Richard L Yeakley

Vikas I Gupta

Alwin J Tsao

Kenneth E Bean

Timothy Alan Rost

Rajiv R Shah

E Ajith Amerasekera

Gregory Charles Baldwin

Kueing-Long Chen

Chi-Cheong Shen

Kamel Benaissa

Michael D Aragon

James D Guillory

A method is described for forming a high gain bipolar junction transistor in a optimized CMOS integrated circuit. The bipolar junction transistor comprises a compensated base region ( ) which is formed by forming the p-well region ( ) and the n-well region ( ) in a common substrate region.

Method of manufacturing a high gain bipolar junction transistor with counterdoped base in CMOS technology

In a split gate process for dual voltage chips, the N-type high-voltage transistors which are part of the ESD protection circuit, and therefore have the thicker gate oxide of the high-voltage transistors, can receive channel doping and drain extender doping which is the same as the core transistors. This causes these transistors to develop a high substrate current during an ESD event, triggering the protection circuit.

On-chip ESD protection in dual voltage CMOS

A device (10) for controlling current through a circuit has an antifuse material (18) separating a first conductor (12) and a second conductor (20). An insulating element (14) and another insulating element (16) further separate the first conductor (12) from the second conductor (20). The antifuse material (18) includes a dopant which raises the band gap and seals off paths in grain boundaries of the antifuse material (18) in order to limit leakage current from flowing between the first conductor (12) and the second conductor (20). When an interconnection is desired, a high voltage pulse is applied across the first conductor (12) and the second conductor (20) to initially break down the antifuse material (18). The breakdown of the antifuse material (18) causes a filament (22) to form between the first conductor (12) and the second conductor (20). The filament (22) creates a conduction path connecting the first conductor (12) and the second conductor (20) electrically together. Additional current is forced through the antifuse material (18) to permanently set the filament (22) in order to interconnect circuit elements coupled to the first conductor (12) and the second conductor (20).

Antifuse device for controlling current in a circuit using an antifuse

Disclosed is a scaled, self aligned, bipolar transistor and a method of fabrication which is compatible with MOSFET device structures. A transistor intrinsic base region is formed in the face of an isolated epitaxial region and polysilicon is deposited, patterned and etched to form emitter regions. An oxide cap and first sidewall oxide spacers are formed on the polysilicon emitters and the single crystal silicon is etched using the oxide covered emitters as a mask to form recessed regions in the epitaxial layer. The extrinsic base region is then formed adjacent at least one side of the base by implanting appropriate dopants into one of the recessed regions. A second sidewall oxide spacer is then formed on the vertical base emitter structure and a heavily doped collector contact region is formed by implanting appropriate dopants into another one of the recessed silicon regions. The collector contact region is self aligned to the second sidewall oxide spacer which prevents the contact of base and heavily doped collector. Finally, the oxide cap covering the upper emitter surfaces is removed and emitter, base and collector contact regions are silicided to reduce contact resistance.

Method of forming a recessed contact bipolar transistor

Method and device for controlling current in a circuit

Method of forming a recessed contact bipolar transistor and field effect

Disclosed is a bipolar transistor and a method of fabrication thereof compatible with MOSFET devices. A transistor intrinsic base region (54) is formed in the face of a semiconductor well (22), and covered with a gate oxide (44). The gate oxide (44) is opened, and doped polysilicon is deposited thereover to form a polyemitter structure (68) in contact with the base region (54). Sidewall oxide (82, 84) is formed on the polyemitter strucure (60). A collector region (90) and an extrinsic base region (100) are formed in the semicondcutor well (22) and self aligned with respect to opposing side edges of the polyemitter sidewall oxide (82, 84).

Bipolar transistor fabrication utilizing CMOS techniques

The described embodiments of the present invention provide a protective layer on the surface of silicided regions and methods for its formation. In the primary described embodiment, a titanium silicide layer is formed in integrated circuitry using self-aligned techniques. Local interconnection layers may be formed using biproducts of the self-aligned titanium disilicide formation. A layer of another siliciding metal, for example platinum, is then formed overall. The platinum layer is then subjected to an annealing step which causes a portion of the silicon in the titanium disilicide layers to react with the platinum to form platinum silicide. This platinum silicide layer is formed in a self-aligned manner on the surface of the silicided regions. The platinum silicide layer serves to protect the underlying titanium disilicide layer from subsequent etching steps of other harmful processing operations.

Method for forming protective barrier on silicided regions

A method for forming a self-aligned horizontal transistor includes the step of first defining a narrow base contact on an isolated N-tank (10) to define a first reference edge (41). A layer of sidewall oxide (40) is then disposed on the vertical wall of the base contact (34) to define a second reference edge (42). An emitter well (44) and a collector well (46) are then defined on either side of the contact with the vertical wall of the emitter well (44) aligned with the reference edge (42). A dopant material is then disposed adjacent the reference edge (42) and the dopant diffused into the substrate from a lateral direction to form a P-type base region (58) with a graded impurity profile. N-doped regions (64) and (66) are then formed in the emitter and collector wells to form the emitter and collector of the transistor.

Method for forming a horizontal self-aligned transistor

Method for forming a recessed contact bipolar transistor and field

A silicon on insulator semiconductor structure employs a strain layer fabricated of an electrically inactive material. The strain layer comprises silicon with a germanium additive to produce a sublayer exhibiting a low breakdown voltage and thus effective for selective anodization.

Anodizable strain layer for SOI semiconductor structures

Disclosed is a bipolar transistor and a method of fabrication thereof compatible with MOSFET devices. A transistor intrinsic base region (54) is formed in the face of a semiconductor well (22), and covered with a gate oxide (44). The gate oxide (44) is opened, and doped polysilicon is deposited thereover to form a polyemitter structure (68) in contact with the base region (54). Sidewall oxide (82, 84) is formed on the polyemitter structure (60). A collector region (90) and an extrinsic base region (100) are formed in the semiconductor well (22) and self aligned with respect to opposing side edges of the polyemitter sidewall oxide (82, 84).

A horizontal structure transistor is fabricated in a shallow epitaxial island which is completely surrounded by an insulator, such as oxide. The transistor has base and emitter regions which are diffused into the island from the same mask so that the base width is controllable and remains constant with respect to the emitter. A polysilicon base contact rests on top of the island and is isolated from the emitter and collector regions by an oxide layer. The horizontal structure transistor can easily be fabricated to include complementary bipolar transistors and complementary IGFET devices on the same substrate.

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Plano, TX, United States of America

David B Spratt