The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2003
Filed:
Oct. 12, 2001
Applicant:
Inventors:
Chi-Cheong Shen, Richardson, TX (US);
David B. Spratt, Plano, TX (US);
Michael D. Aragon, Sachse, TX (US);
Kamel Benaissa, Richardson, TX (US);
Assignee:
Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract
A method is described for forming a high gain bipolar junction transistor in a optimized CMOS integrated circuit. The bipolar junction transistor comprises a compensated base region ( ) which is formed by forming the p-well region ( ) and the n-well region ( ) in a common substrate region.