The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2000
Filed:
Mar. 30, 1999
Applicant:
Inventors:
Alwin J Tsao, Garland, TX (US);
Vikas I Gupta, Dallas, TX (US);
Gregory C Baldwin, Plano, TX (US);
E Ajith Amerasekera, Plano, TX (US);
David B Spratt, Plano, TX (US);
Timothy A Rost, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257357 ; 257500 ; 257546 ; 257392 ;
Abstract
In a split gate process for dual voltage chips, the N-type high-voltage transistors which are part of the ESD protection circuit, and therefore have the thicker gate oxide of the high-voltage transistors, can receive channel doping and drain extender doping which is the same as the core transistors. This causes these transistors to develop a high substrate current during an ESD event, triggering the protection circuit.