David B Colavito

Title: David B Colavito: Innovator in Semiconductor Technology

Introduction

David B Colavito is a notable inventor based in Rock Hill, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work primarily focuses on methods for improving semiconductor device formation.

Latest Patents

One of his latest patents is titled "Method for low topography semiconductor device formation." This invention discloses a method for forming a planarized field effect transistor (FET). In an exemplary embodiment, the method includes defining an active semiconductor region upon a substrate, which comprises a pair of mesa regions. A source region is defined within a top surface of one of the mesa regions, while a drain region is defined within the other. Subsequently, a gate material is deposited between the mesa regions, and the gate material is planarized to form a gate. This process ensures that the top surface of the gate is substantially planar with the source and drain regions.

Career Highlights

David B Colavito is associated with the International Business Machines Corporation (IBM), where he applies his expertise in semiconductor technology. His innovative approaches have contributed to advancements in the field, enhancing the performance and efficiency of semiconductor devices.

Collaborations

Throughout his career, David has collaborated with talented individuals such as Nivo Rovedo and Phung T Nguyen. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

David B Colavito is a prominent figure in the semiconductor industry, known for his inventive methods and contributions to technology. His work continues to influence the development of advanced semiconductor devices, showcasing the importance of innovation in this field.