Santa Clara, CA, United States of America

Dany-Sebastien Ly-Gagnon

This inventor holds 7 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignee: Intel Corporation. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dany-Sebastien Ly-Gagnon. Retrieved from https://idiyas.com/inventor/dany-sebastien-ly-gagnon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

% Patents Active = 85.7

 

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2016-2026

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7 patents (USPTO):Explore Patents

Title: Dany-Sebastien Ly-Gagnon: Innovator in Memory Technology

Introduction

Dany-Sebastien Ly-Gagnon is a prominent inventor based in Santa Clara, CA. He has made significant contributions to the field of memory technology, holding a total of six patents. His work focuses on enhancing memory devices and improving their performance.

Latest Patents

Among his latest patents is a groundbreaking invention titled "Multi-level memory programming and readout." This patent describes a memory device that includes a three-dimensional crosspoint memory array. The memory cells in this array comprise two terminals and a storage element that can be programmed to one of several program states, each representing distinct values for at least two bits. The access circuitry is designed to apply a first program pulse with a positive polarity across the terminals of a memory cell to program it to a specific state. Additionally, a second program pulse with a negative polarity is applied to program the cell to another state.

Another notable patent is the "Selection scheme for crosspoint memory." This invention outlines a selection scheme where the selection voltage applied across the memory cell is gradually increased. Once the memory cell reaches its threshold, the voltage is reduced to a level suitable for performing read or write operations. This reduction minimizes additional transient current, which can improve read disturb and write endurance issues.

Career Highlights

Dany-Sebastien Ly-Gagnon is currently employed at Intel Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

He collaborates with talented coworkers such as Kiran Pangal and Davide Mantegazza, contributing to a dynamic and innovative work environment.

Conclusion

Dany-Sebastien Ly-Gagnon is a key figure in the development of advanced memory technologies. His patents reflect his commitment to innovation and excellence in the field. His contributions are paving the way for future advancements in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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