Company Filing History:
Years Active: 2016-2024
Title: Innovative Contributions of Daniel R. Lamborn in Memory Technology
Introduction
Daniel R. Lamborn, a notable inventor based in Hillsboro, Oregon, has made significant contributions to the field of memory technology. With a total of three patents to his name, he has demonstrated a strong commitment to advancing integrated circuit applications, particularly through innovative etch stop structures and magnetic memory designs.
Latest Patents
One of his latest patents, titled "Non-conductive etch stop structures for memory applications with large contact height differential," addresses the challenges of working with varying heights in memory structures. This invention allows for the creation of etch stops over complex 3D NAND memory staircase structures, enhancing the precision in etching contact holes that correspond to the wordlines of the staircase.
Another notable patent by Lamborn is for "Capped magnetic memory." This apparatus includes a magnetic tunnel junction (MTJ) situated between first and second electrodes and emphasizes the use of a dielectric layer, providing improved functionality and efficiency in magnetic memory devices.
Career Highlights
Lamborn's career is highlighted by his work at Intel Corporation, where he collaborates on advancements in memory technologies. His expertise is instrumental in developing solutions that address the complexities of modern integrated circuits, which are crucial for the electronics industry.
Collaborations
Throughout his career, Lamborn has worked with talented individuals such as Oleg Golonzka and Christopher J. Wiegand. These collaborations have fostered an environment of innovation, allowing for a collective effort in tackling the intricate challenges faced by memory application technologies.
Conclusion
Daniel R. Lamborn stands out as a prominent figure in the realm of innovation and invention. His groundbreaking patents and collaborative efforts at Intel Corporation not only reflect his dedication to the advancement of memory technology but also pave the way for future developments in the field.