The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2019
Filed:
Jun. 19, 2015
Intel Corporation, Santa Clara, CA (US);
Daniel R. Lamborn, Hillsboro, OR (US);
Oleg Golonzka, Beaverton, OR (US);
Christopher J. Wiegand, Portland, OR (US);
Philip E. Heil, Hillsboro, OR (US);
M D Tofizur Rahman, Portland, OR (US);
Rebecca J. Castellano, Beaverton, OR (US);
Tarun Bansal, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ), between first and second electrodes, comprising a dielectric layer between fixed and free layers; a dielectric film directly contacting sidewalls of the first electrode; and a metallic layer coupled to the sidewalls via the dielectric film; wherein (a) a vertical axis intersects the first and second electrodes and the MTJ but not the metallic layer, (b) a first horizontal axis intersects the metallic layer, the dielectric film, and the first electrode; and (c) a second horizontal axis, between the first horizontal axis and the MTJ, intersects the dielectric film and the first electrode but not the capping layer. Other embodiments are described herein.