Daniel J Harris

Title: The Innovative Contributions of Daniel J Harris

Introduction

Daniel J Harris is a notable inventor based in Beaverton, OR (US). He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Harris holds a patent for a technique titled "Subfins replaced using backside dielectric formation." This patent describes methods to form semiconductor devices by removing semiconductor subfins and replacing them with dielectric materials. The innovation includes a gate structure surrounding a semiconductor region, with a subfin adjacent to a dielectric layer that serves as shallow trench isolation (STI) between devices. The process involves removing the bulk substrate to expose the subfin's bottom surface, allowing for the creation of backside recesses. A dielectric liner is then formed within these recesses, followed by a dielectric fill. This replacement of subfins with dielectric materials aims to lower parasitic capacitance and reduce parasitic current between adjacent source or drain regions.

Career Highlights

Harris is currently employed at Intel Corporation, where he continues to push the boundaries of semiconductor technology. His innovative approach has led to advancements that benefit the industry and improve device performance.

Collaborations

Harris has collaborated with esteemed colleagues such as Weihong Gao and Giorgio Mariottini. Their combined expertise contributes to the development of cutting-edge technologies in the semiconductor field.

Conclusion

Daniel J Harris is a prominent figure in semiconductor innovation, with a focus on improving device efficiency through his patented techniques. His work at Intel Corporation and collaborations with other experts highlight his commitment to advancing technology in this critical field.