Austin, TX, United States of America

Daniel Hadad

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Freescale Semiconductor,inc.. Active years: 2013-2014.

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2013-2014

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3 patents (USPTO):Explore Patents

Title: The Innovations of Daniel Hadad

Introduction

Daniel Hadad is an accomplished inventor based in Austin, TX. He has made significant contributions to the field of non-volatile memory technology. With a total of 3 patents to his name, Hadad's work has had a notable impact on the industry.

Latest Patents

One of Hadad's latest patents is focused on a non-volatile memory (NVM) system that includes a memory array and a memory controller. This innovative system is designed to perform a first array integrity read operation until an error is detected. The memory controller determines if the error is not correctable by error correction code (ECC). It characterizes the first word line voltage associated with the error as a first threshold voltage. The controller then performs a second array integrity read operation, which involves reading the array with a word line read voltage that is offset from the first threshold voltage. This offset is based on a predetermined width offset reference value. Finally, the controller checks a checksum value resulting from the second read operation to determine if an imminent failure in the memory array is indicated.

Another patent by Hadad also addresses the imminent failure of a non-volatile memory array. The method includes performing a first array integrity read until an error is detected and determining that the error is not ECC correctable. It involves performing a second array integrity read until all bits of the memory array indicate a predetermined state. The second word line voltage associated with this state is characterized as a second threshold voltage. The difference between the first and second threshold voltages is then compared to a predetermined value.

Career Highlights

Daniel Hadad is currently employed at Freescale Semiconductor, Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory systems.

Collaborations

Hadad has collaborated with notable colleagues such as Chen He and Richard Eguchi, contributing to various projects and innovations in the field.

Conclusion

Daniel Hadad's contributions to non-volatile memory technology through his patents and work at Freescale Semiconductor, Inc. highlight his role as a significant inventor in the industry. His innovative approaches to memory systems continue to pave the way for advancements in technology.

Profile summary based on public USPTO records.
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