Magnolia, MA, United States of America

Daniel F Downey

USPTO Granted Patents = 8 

Average Co-Inventor Count = 1.1

ph-index = 5

Forward Citations = 108(Granted Patents)


Location History:

  • Gloucester, MA (US) (2006)
  • Magnolia, MA (US) (1982 - 2007)

Company Filing History:


Years Active: 1982-2007

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8 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Daniel F. Downey

Introduction

Daniel F. Downey, an accomplished inventor based in Magnolia, MA, has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His innovative methods and techniques have played a vital role in advancing the fabrication processes used in various semiconductor applications.

Latest Patents

Among Downey's latest patents are notable advancements in the formation of thin film layers and ultrashallow junctions.

1. **Methods for forming thin film layers by simultaneous doping and sintering** - This patent details a method for applying a thin film layer on a substrate through concurrent doping with low energy ions and heating to facilitate a reaction between the dopant material and the substrate surface. The innovative approach employs plasma doping for enhanced results, specifically within silicon oxide layers.

2. **Methods for forming low resistivity, ultrashallow junctions with low damage** - In this patent, Downey outlines techniques for introducing dopant materials into the upper surface of semiconductor wafers to create charge carrier complexes. The method emphasizes short-time thermal processing techniques, such as flash rapid thermal processing, sub-melt laser processing, and RF or microwave annealing, to achieve desired junction characteristics with minimal damage.

Career Highlights

Downey's impressive career includes roles at Varian Semiconductor Equipment Associates, Inc. and Varian Associates, Inc., where he contributed to cutting-edge technology in semiconductor manufacturing. His work has had a lasting impact on the efficiency and effectiveness of semiconductor devices.

Collaborations

Throughout his career, Downey has collaborated with notable colleagues, including George T. Lecouras and Edwin A. Arevalo. Their joint efforts have fostered an environment of innovation, leading to significant advancements in their field.

Conclusion

Daniel F. Downey's work exemplifies the spirit of innovation in the semiconductor industry. His patents not only reflect his technical expertise but also contribute to the broader landscape of technological advancements. As an inventor, he continues to inspire future generations of engineers and scientists.

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