The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1984
Filed:
Aug. 27, 1982
Applicant:
Inventor:
Daniel F Downey, Magnolia, MA (US);
Assignee:
Varian Associates, Inc., Palo Alto, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 55 ; 65102 ; 65104 ; 427 85 ; 427 93 ; 4273981 ; 427444 ;
Abstract
In a method for reflow of a phosphosilicate glass (PSG) layer applied to a semiconductor wafer, the wafer is placed in a processing chamber in parallel alignment with a planar blackbody source. The chamber is evacuated, and the source rapidly and uniformly heats the PSG layer to a temperature at which plastic flow occurs. The blackbody source provides significant radiation in the 7-10 micron portion of the infrared spectrum. The thermal treatment is typically completed in 8-15 seconds, thereby avoiding impurity redistribution in the semiconductor device.