The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
May. 09, 2002
Applicant:
Daniel F. Downey, Magnolia, MA (US);
Inventor:
Daniel F. Downey, Magnolia, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc, Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/42 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for forming ultrashallow junctions in semiconductor wafers include introducing into a shallow surface layer of a semiconductor wafer a dopant material that is selected to form charge carrier complexes which produce at least two charge carriers per complex, and short-time thermal processing of the doped surface layer to form the charge carrier complexes. The short-time thermal processing step may be implemented as flash rapid thermal processing of the doped surface layer, sub-melt laser processing of the doped surface layer, or RF or microwave annealing of the doped surface layer.