Gilbert, AZ, United States of America

Daniel D Moline

This inventor holds 1 USPTO granted patent. Top assignee: Hvvi Semiconductors, Inc.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel D Moline. Retrieved from https://idiyas.com/inventor/daniel-d-moline-dslfniya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovations of Daniel D Moline

Introduction

Daniel D Moline is an accomplished inventor based in Gilbert, AZ (US). He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor component that enhances the efficiency and functionality of electronic devices.

Latest Patents

Moline holds a patent for a semiconductor component. This patent describes various embodiments of semiconductor components and methods for manufacturing these components. One embodiment details a method that includes a heat sink and a semiconductor die with multiple terminals. The method involves attaching a leadframe structure to the semiconductor die and ensuring electrical isolation from the heat sink, which is crucial for optimal performance.

Career Highlights

Daniel D Moline is associated with Hvvi Semiconductors, Inc., where he applies his expertise in semiconductor technology. His work at the company focuses on advancing semiconductor components that are vital for modern electronic applications. Moline's innovative approach has positioned him as a key player in the semiconductor industry.

Collaborations

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Conclusion

Daniel D Moline's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Hvvi Semiconductors, Inc. highlight his commitment to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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