Beaverton, OR, United States of America

Daniel B OBrien

This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daniel B OBrien. Retrieved from https://idiyas.com/inventor/daniel-b-obrien

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Daniel B. O’Brien: Inventor of Integrated Circuit Interconnect Structures

Introduction

Daniel B. O’Brien is an inventor based in Beaverton, Oregon, and is associated with Intel Corporation. His patent work addresses integrated circuit interconnect design, with a focus on copper-free vias and electrical performance.

Latest Patents

O’Brien is named on one patent: “Integrated Circuit Interconnect Structures Including Copper-Free Vias.” The invention describes an interconnect structure compatible with single-damascene techniques that uses a non-copper via made from low-resistivity metal. The metal can be deposited at low temperatures while maintaining good adhesion. The patent also describes using metals with body-centered cubic crystallinity to help template favorable crystallinity in the diffusion barrier of an upper-level interconnect feature, potentially reducing electrical resistance.

Career Highlights

O’Brien’s listed patent reflects work on materials and fabrication approaches for integrated circuit interconnects. His professional association with Intel Corporation connects this invention to the company’s semiconductor technology work. His record includes 1 patent.

Collaborations

Jeffrey S. Leib and James Y. Jeong are identified as O’Brien’s coworkers. Their shared professional context reflects collaboration among colleagues working in the semiconductor field.

Conclusion

Daniel B. O’Brien’s patent highlights an approach to improving integrated circuit interconnects through low-resistivity, copper-free vias and carefully selected materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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