Phoenix, AZ, United States of America

Dan L Burt

This inventor holds 4 USPTO granted patents. Top assignee: Motorola Corporation. Active years: 1976-1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dan L Burt. Retrieved from https://idiyas.com/inventor/dan-l-burt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 82(Granted Patents)


Company Filing History:


Years Active: 1976-1992

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4 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Dan L Burt

Introduction

Dan L Burt is a notable inventor based in Phoenix, AZ, who has made significant contributions to the field of semiconductor technology. With a total of 4 patents to his name, Burt's work focuses on improving metallization processes and enhancing the performance of semiconductor devices.

Latest Patents

One of Burt's latest patents is a metallization process that describes an improved method for depositing TiW/TiWN/TiW/Au metallization. This process provides superior adhesion properties and excellent barrier properties, making it suitable for metal line widths of one micron or smaller. To achieve these properties, it is crucial to ensure that the layer immediately underlying the gold layer is substantially pure TiW, deposited in a nitrogen-free sputtering atmosphere. The gas supply manifolds and deposition chamber are purged and evacuated following the deposition of the TiW layer and prior to the deposition of the TiWN layer. Additionally, a final TiW layer is placed on top of the gold layer to act as an etching mask.

Another significant patent by Burt involves metallization means and methods for high-temperature applications. This innovation allows semiconductor devices with resistor regions to operate at higher temperatures while improving bond pull strength. By using a single layer, such as Ni--Cr, as a combined resistive and barrier layer, the device can prevent interdiffusion of silicon and aluminum. The Ni--Cr layer also serves as thin film resistor material, enhancing the overall performance of the semiconductor device.

Career Highlights

Dan L Burt has had a distinguished career at Motorola Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to significant improvements in device performance and reliability.

Collaborations

Throughout his career, Burt has collaborated with esteemed colleagues, including George F Anderson and Richard F Taraci. These partnerships have fostered a collaborative environment that has contributed to the success of their projects.

Conclusion

Dan L Burt's contributions to the field of semiconductor technology through his innovative patents and work at Motorola Corporation highlight his importance as an inventor. His advancements in metallization processes and high-temperature applications continue to influence the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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