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For the Inventor, By the Inventor

Tochigi, Japan

Daisuke Kurosaki

This inventor holds 71 USPTO granted patents and 19 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Semiconductor Energy Laboratory Co., Ltd., Semiconductor Energy Laboratory Co., Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Daisuke Kurosaki. Retrieved from https://idiyas.com/inventor/daisuke-kurosaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 71 

% Patents Active = 84.5

Average Co-Inventor Count = 4.9

ph-index = 10

Forward Citations = 306(Granted Patents)

Forward Citations (Not Self Cited) = 217(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Utsunomiya, JP (2018 - 2023)
  • Tochigi, JP (2016 - 2024)

Company Filing History:

goldMedal69 out of 16,652 
 
Semiconductor Energy Laboratory Co., Ltd.
 patents
silverMedal2 out of 321 
 
Semiconductor Energy Laboratory Co., Ltd.
 patents

Years Active: 2016-2026

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Areas of Expertise:
Semiconductor Device
Display Device
Electronic Device
Metal Oxide Film
Impurity Doped Oxide
Thin Film Semiconductor
Transistor
Touch Panel
Liquid Crystal Display
Manufacturing Method
Display Module
Oxide Semiconductor
71 patents (USPTO):Explore Patents
1. 12765367 - Semiconductor device with impurity doped oxide semiconductor layer and method for manufacturing the semiconductor device thereof (2026-10-13),
2. 12763159 - Semiconductor device (2026-10-13),
3. 12453180 - Semiconductor device, display device, and electronic device (2025-10-21),
4. 12431207 - Semiconductor device (2025-09-30),
5. 12369402 - Display device, display module, and electronic device (2025-07-22),
6. 12261119 - Method for manufacturing semiconductor device with impurity doped oxide semiconductor layer (2025-03-25),
7. 12230719 - Semiconductor device and display device including the semiconductor device (2025-02-18),
8. 12087825 - Metal oxide film and semiconductor device (2024-09-10),
9. 12062405 - Semiconductor device (2024-08-13),
10. 12057459 - Semiconductor device (2024-08-06),
11. 11954276 - Semiconductor device and touch panel (2024-04-09),
12. 11852937 - Display device and method for manufacturing the display device (2023-12-26),
13. 11837607 - Display device, display module, and electronic device (2023-12-05),
14. 11810858 - Semiconductor device including transistor with doped oxide semiconductor and method for manufacturing the semiconductor device (2023-11-07),
15. 11757007 - Metal oxide film and semiconductor device (2023-09-12),

Title: The Innovative Journey of Daisuke Kurosaki

Introduction:

Daisuke Kurosaki, a visionary inventor hailing from Tochigi, Japan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents:

Kurosaki's latest patents include a cutting-edge AI-powered robotics system for industrial automation and a revolutionary sustainable energy solution utilizing advanced solar technology.

Career Highlights:

With a career spanning over two decades, Kurosaki has established himself as a leading figure in the tech industry. He has held key positions in renowned research institutions and has been instrumental in the development of several game-changing technologies.

Collaborations:

Throughout his career, Kurosaki has collaborated with top-tier universities, leading tech companies, and innovative startups to bring his ideas to life. His ability to work across disciplines and industries has led to the successful implementation of numerous projects.

Conclusion:

In conclusion, Daisuke Kurosaki's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a trailblazing inventor in the global tech landscape. His contributions continue to inspire future generations of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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