Claudio Lanzieri

Title: Claudio Lanzieri: Innovator in PHEMT Technology

Introduction

Claudio Lanzieri is a prominent inventor based in Rome, Italy. He has made significant contributions to the field of high electron mobility transistors (HEMT), particularly in the development of enhancement/depletion PHEMT devices. With a total of 2 patents to his name, Lanzieri's work is pivotal in advancing integrated circuit technology.

Latest Patents

Lanzieri's latest patents include innovative designs that enhance the performance of PHEMT devices. The first patent, titled "Enhancement/depletion PHEMT device," describes a layered epitaxial structure that is beneficial for manufacturing integrated circuits operating at millimeter-wave and microwave frequencies. The second patent, "Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same," details a sophisticated PHEMT power device that incorporates a semi-insulating substrate and a unique contact layer structure. This invention aims to improve the efficiency and functionality of power devices in various applications.

Career Highlights

Claudio Lanzieri is associated with Selex Sistemi Integrati S.p.a., where he continues to push the boundaries of technology in the field of electronics. His expertise in PHEMT technology has positioned him as a key player in the industry, contributing to advancements that have practical applications in modern electronics.

Collaborations

Lanzieri has collaborated with notable colleagues, including Simone Lavanga and Marco Peroni. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas, further enhancing the development of cutting-edge technologies.

Conclusion

Claudio Lanzieri's contributions to the field of PHEMT technology exemplify the spirit of innovation. His patents reflect a commitment to advancing electronic devices, making a lasting impact on the industry.