Selex Sistemi Integrati S.p.a.

Claudio Lanzieri

Marco Peroni

Alessandro Chini

Antonio Cetronio

Simone Lavanga

An embodiment of the present invention concerns a layered epitaxial structure for enhancement/depletion PHEMT devices, an enhancement/depletion PHEMT device and a method for manufacturing an enhancement/depletion PHEMT device that finds advantageous, but not exclusive, application in the manufacturing of integrated circuits operating at millimeter-wave and microwave frequencies.

Enhancement/depletion PHEMT device

Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device () including a semi-insulating substrate (); an epitaxial substrate () formed on the semi-insulating substrate () a contact layer (). The contact layer () includes a lightly doped contact layer () formed on the Schottky layer (), and a highly doped contact layer () formed on the lightly doped contact layer () and having a doping concentration higher than the lightly doped contact layer (). The PHEMT power device () further includes a&#x2014;wide recess () formed to penetrate the highly doped contact layer () and a narrow recess () formed in the wide recess () to penetrate the lightly doped contact layer (). The gate electrode () is formed in the narrow recess () and in Schottky contact with the Schottky layer ().

Growing community of inventors

Rome, Italy

Claudio Lanzieri