The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Oct. 04, 2006
Claudio Lanzieri, Rome, IT;
Simone Lavanga, Rome, IT;
Marco Peroni, Rome, IT;
Antonio Cetronio, Frascati, IT;
Claudio Lanzieri, Rome, IT;
Simone Lavanga, Rome, IT;
Marco Peroni, Rome, IT;
Antonio Cetronio, Frascati, IT;
Abstract
Disclosed herein is a pseudomorphic high electron mobility transistor (PHEMT) power device () including a semi-insulating substrate (); an epitaxial substrate () formed on the semi-insulating substrate () a contact layer (). The contact layer () includes a lightly doped contact layer () formed on the Schottky layer (), and a highly doped contact layer () formed on the lightly doped contact layer () and having a doping concentration higher than the lightly doped contact layer (). The PHEMT power device () further includes a—wide recess () formed to penetrate the highly doped contact layer () and a narrow recess () formed in the wide recess () to penetrate the lightly doped contact layer (). The gate electrode () is formed in the narrow recess () and in Schottky contact with the Schottky layer ().