Clarence W Teng

This inventor holds 37 USPTO granted patents, primarily in Dynamic RAM Technology. Top assignee: Texas Instruments Corporation. Active years: 1985-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Clarence W Teng. Retrieved from https://idiyas.com/inventor/clarence-w-teng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 37

% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 15

Forward Citations = 717(Granted Patents)

Location History:

Dallas, TX (US) (1991)
Plano, TX (US) (1985 - 1999)

Company Filing History:

37 out of 29,869

Texas Instruments Corporation

patents

Years Active: 1985-1999

Loading Chart...

Areas of Expertise:

Dynamic RAM

Capacitor Structures

Isolation Processes

Trench Memory Cell

High Density DRAM

Latch-Up Resistant CMOS

Transistor Fabrication

Substrate Bias

Memory Cell Design

Integrated Circuit

Defect Free Fabrication

Microplanarization

37 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5894145 - Multiple substrate bias random access memory device (1999-04-13),

2. 5671175 - Capacitor over bitline DRAM cell (1997-09-23),

3. 5595925 - Method for fabricating a multiple well structure for providing multiple (1997-01-21),

4. 5587614 - Microplanarization of rough electrodes by thin amorphous layers (1996-12-24),

5. 5364812 - High density dynamic RAM cell (1994-11-15),

6. 5352913 - Dynamic memory storage capacitor having reduced gated diode leakage (1994-10-04),

7. 5225363 - Trench capacitor DRAM cell and method of manufacture (1993-07-06),

8. 5202279 - Poly sidewall process to reduce gated diode leakage (1993-04-13),

9. 5198383 - Method of fabricating a composed pillar transistor DRAM Cell (1993-03-30),

10. 5156992 - Process for forming poly-sheet pillar transistor DRAM cell (1992-10-20),

11. 5111259 - Trench capacitor memory cell with curved capacitors (1992-05-05),

12. 5105245 - Trench capacitor DRAM cell with diffused bit lines adjacent to a trench (1992-04-14),

13. 5087591 - Contact etch process (1992-02-11),

14. 5061653 - Trench isolation process (1991-10-29),

15. 5057887 - High density dynamic RAM cell (1991-10-15),

Title: The Innovative Journey of Clarence W Teng

Introduction: Clarence W Teng, a visionary inventor based in Plano, TX, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Clarence W Teng holds several patents in various technological domains, showcasing his versatility and creativity in innovation.

Career Highlights: With a career spanning over two decades, Clarence W Teng has established himself as a leading figure in the tech industry, known for his ability to transform ideas into tangible inventions that have real-world applications.

Collaborations: Throughout his career, Clarence W Teng has collaborated with top research institutions, universities, and leading tech companies to further his innovative projects and bring them to fruition.

Conclusion: Clarence W Teng's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has solidified his reputation as a pioneering inventor in Plano, TX, and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]