The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1993
Filed:
Dec. 05, 1990
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method of reducing gated diode leakage in trench capacitor type field plate isolated dynamic random access memory devices is disclosed. Trenches are etched into a face of a body of semiconductor material. Storage nodes surrounding the trenches are created. A polysilicon layer is formed on the trench walls. A storage dielectric layer is formed on the trench walls, adjacent to the layer of polysilicon on the trench walls, so that the layer of polysilicon on the trench walls lies between the storage dielectric layer and the storage node. The layer of polysilicon on the trench walls reduces leakage current from the storage node. A trench type field plate isolated random access memory cell structure is also disclosed.