Location History:
- Dallas, TX (US) (1990 - 1993)
- Garland, TX (US) (1992 - 1994)
Company Filing History:
6 out of 29,279 
1 out of 832,891 Years Active: 1990-1994
Title: Gishi Chung: Innovator in Dynamic Memory Storage Technologies
Introduction
Gishi Chung is a prominent inventor based in Garland, Texas, known for her significant contributions to the field of dynamic memory storage technologies. With a total of seven patents to her name, she has made remarkable advancements in reducing leakage in memory devices, which is crucial for enhancing performance and efficiency.
Latest Patents
Among her latest patents is a groundbreaking invention titled "Dynamic memory storage capacitor having reduced gated diode leakage." This patent discloses a method for minimizing gated diode leakage in trench capacitor type field plate isolated dynamic random access memory devices. The process involves etching trenches into a semiconductor material and creating storage nodes around these trenches. A polysilicon layer is formed on the trench walls, which, along with a storage dielectric layer, effectively reduces leakage current from the storage node. Another notable patent is the "Method to eliminate gate filaments on field plate isolated devices." This invention addresses the prevention of undesirable polysilicon word line gate filaments in integrated circuit devices, enhancing the reliability of VLSI dynamic random access memories.
Career Highlights
Gishi Chung has had a distinguished career, working with renowned companies such as Texas Instruments Corporation. Her expertise in semiconductor technology has positioned her as a leading figure in the industry, contributing to advancements that have a lasting impact on memory device performance.
Collaborations
Throughout her career, Gishi has collaborated with notable professionals, including William R. McKee and Clarence W. Teng. These collaborations have fostered innovation and have been instrumental in the development of her patented technologies.
Conclusion
Gishi Chung's innovative work in dynamic memory storage technologies has significantly advanced the field, particularly in reducing leakage in memory devices. Her contributions continue to influence the industry and pave the way for future advancements.