Saratoga Springs, NY, United States of America

Chunhui Low

This inventor holds 1 USPTO granted patent. Top assignee: Hefechip Corporation Limited. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chunhui Low. Retrieved from https://idiyas.com/inventor/chunhui-low

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Chunhui Low in Semiconductor Technology

Introduction

Chunhui Low is an accomplished inventor based in Saratoga Springs, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Chunhui Low holds a patent titled "Method to form a fin structure on deep trenches for a semiconductor device." This patent describes a method that includes several steps to create a fin structure on deep trenches (DTs) for semiconductor devices. The process involves providing a buried oxide layer (BOX) with DTs and silicon polies, forming a fin on the BOX and silicon polies, and utilizing masks and liners to achieve the desired structure. This innovative approach enhances the efficiency and performance of semiconductor devices.

Career Highlights

Chunhui Low is currently associated with Hefechip Corporation Limited, where he continues to work on advancing semiconductor technologies. His expertise and innovative mindset have positioned him as a valuable asset in the industry.

Collaborations

Chunhui collaborates with talented coworkers, including Liang Li and Huang Liu, who contribute to the development of cutting-edge technologies in their field.

Conclusion

Chunhui Low's contributions to semiconductor technology through his patent demonstrate his commitment to innovation and excellence. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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