Hsinchu, Taiwan

Chung-Wei Fang


Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2018-2021

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4 patents (USPTO):Explore Patents

Title: **Chung-Wei Fang: Innovator in Chemical Vapor Deposition Technologies**

Introduction

Chung-Wei Fang is a prominent inventor based in Hsinchu, Taiwan, recognized for his contributions to the field of chemical vapor deposition (CVD). With a total of four patents to his name, Fang has demonstrated a commitment to enhancing semiconductor manufacturing processes.

Latest Patents

Fang's latest innovations include two significant patents related to CVD apparatus and methods. The first patent, titled "CVD Apparatus with Multi-Zone Thickness Control," describes a method where a process gas is applied to a vacuum chamber. This method involves guiding the process gas through a shower head designed to redistribute the gas laterally unevenly. As a result, the density of the process gas increases from the center to the peripheral regions of the chamber, leading to the formation of a precursor material with an uneven thickness profile. This innovation is pivotal in improving the uniformity of coatings in semiconductor manufacturing.

The second patent, also under the title "CVD Apparatus with Multi-Zone Thickness Control," details the chemical vapor deposition apparatus itself. This apparatus includes a vacuum chamber and a gas import positioned in the upper region, with at least one exhaust port at the bottom. The shower head, equipped with multiple holes, redistributes the process gas, aiding in the formation of a precursor material that corresponds to the removal profile of a subsequent chemical mechanical polishing (CMP) process. This invention significantly enhances the planarity of formed layers after the CMP process.

Career Highlights

Chung-Wei Fang is affiliated with Taiwan Semiconductor Manufacturing Company (TSMC), a leading organization in the semiconductor industry. His work focuses on innovative solutions that enhance the efficiency and effectiveness of CVD processes, making him an invaluable asset to TSMC.

Collaborations

Fang collaborates closely with fellow researchers, including Yi Hsun Chiu and Cho-Han Li. These collaborations have undoubtedly contributed to the advancement of their shared goals in semiconductor technology and the development of cutting-edge manufacturing processes.

Conclusion

In summary, Chung-Wei Fang stands out as an innovative inventor in the field of chemical vapor deposition technologies. With his four patents, he continues to push the boundaries of semiconductor manufacturing, making significant contributions to the industry. His work alongside his colleagues reinforces the importance of collaboration in achieving technological advancements.

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