Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Wei Fang

Yi Hsun Chiu

Yao Fong Dai

Cho-Han Li

Ming-Hsien Tsai

Kai-Wen Wu

Yao-Fong Dai

Chih-Tung Lo

The present disclosure relates to a method of chemical vapor deposition (CVD). In some embodiments, a process gas is applied into a vacuum chamber. The process gas is guided downstream the vacuum chamber through a shower head arranged under the gas import, where the process gas is redirected to be laterally unevenly distributed under the shower head. A density of the process gas increases from a center region to a peripheral region of the vacuum chamber. The process gas is then deposited onto a first substrate to form a precursor material with an uneven thickness profile as a result of uneven distribution of the process gas. The shower head has multiple control zones each having a plurality of holes disposed through the shower head.

CVD apparatus with multi-zone thickness control

The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.

The present disclosure relates to a chemical vapor deposition apparatus and associated methods. In some embodiments, the CVD apparatus has a vacuum chamber and a gas import having a gas import axis through which a process gas is imported into the vacuum chamber and being arranged near an upper region of the vacuum chamber. At least one exhaust port is arranged near a bottom region of the vacuum chamber. The CVD apparatus also has a shower head arranged under the gas import having a plurality of holes formed there through with at least two different diameters or densities. The shower head redistributes the process gas to form a precursor material with an uneven thickness that matches a remove profile of a subsequent CMP process. As a result, planarity of the formed layer after the CMP process is improved.

An electromagnetic detection device is provided. The electromagnetic detection device includes an induction coil, a converter, and a controller. The induction coil is utilized to sense an RF signal and generate a sensing RF signal by electromagnetic induction of the induction coil which is proportional to the RF signal. The RF signal is transmitted to a shower head to perform a semiconductor process on a wafer for manufacturing an IC in association with the RF signal. The converter is utilized to convert the sensing RF signal into a DC signal. The controller is utilized to determine whether the semiconductor process is normal or abnormal according to the DC signal during the semiconductor process. The semiconductor process will be terminated when the semiconductor process is determined as abnormal.

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Hsinchu, Taiwan

Chung-Wei Fang