Chung-Jen Hwang

Title: Innovations of Chung-Jen Hwang in Semiconductor Technology.

Introduction: Chung-Jen Hwang is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of floating gate structures. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents: Chung-Jen Hwang holds a patent for "Reverse disturb immune asymmetrical sidewall floating gate devices." This patent describes circuits and methods for providing a floating gate structure that comprises floating gate cells with improved reverse tunnel disturb immunity. The invention features a floating gate structure formed over a semiconductor substrate, which includes a floating gate, a charge trapping dielectric layer, and a control gate. The design incorporates vertical sidewalls, with one side adjacent to a source region and the other adjacent to a drain region. A symmetric sidewall dielectric is formed over the floating gate structure on both sides, while an asymmetric dielectric layer is applied only over the drain side. This innovative approach enhances the reverse tunnel disturb immunity of the device.

Career Highlights: Chung-Jen Hwang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative designs have contributed to the advancement of semiconductor technologies.

Collaborations: Chung-Jen has collaborated with esteemed colleagues, including Jui-Yu Pan and Ming-Hui Shen, to further enhance the development of semiconductor devices.

Conclusion: Chung-Jen Hwang's contributions to semiconductor technology, particularly through his patented innovations, demonstrate his commitment to advancing the field. His work continues to influence the design and functionality of modern semiconductor devices.