Chung-Hsuan Wang

Title: Innovations of Chung-Hsuan Wang in Memory Device Manufacturing

Introduction

Chung-Hsuan Wang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory device manufacturing, holding a total of 3 patents. His work focuses on innovative methods that enhance the efficiency and effectiveness of memory devices.

Latest Patents

Chung-Hsuan Wang's latest patents include a method of manufacturing a memory device and a patterning method. The patterning method involves several steps, including the formation of a control structure with alternating stop layers and oxide layers, a hard mask layer, and a mask pattern on a target layer. A photoresist layer is then applied, allowing for the creation of first openings by removing portions of the hard mask layer and control structure. This process is followed by the removal of the photoresist layer and hard mask layer to create a second opening, which extends into the control structure and target layer. His memory device patent describes a substrate that includes both an array region and a periphery region, featuring first and second stack structures with varying pattern densities.

Career Highlights

Chung-Hsuan Wang is currently employed at Winbond Electronics Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

Chung-Hsuan Wang collaborates with talented coworkers, including Yu-Ting Chen and Tz-Hau Guo. Their combined expertise contributes to the success of their projects and the advancement of technology in their field.

Conclusion

Chung-Hsuan Wang's contributions to memory device manufacturing highlight his innovative spirit and dedication to advancing technology. His patents reflect a deep understanding of the complexities involved in memory device design and manufacturing.