This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2019.
Company Filing History:
Years Active: 2019
Title: Innovations of Chung-Hsing Lin
Introduction
Chung-Hsing Lin is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Chung-Hsing Lin holds a patent for a Multi-threshold voltage semiconductor device. This innovative semiconductor device includes a first metal-oxide semiconductor (MOS) transistor on a substrate, a first ferroelectric (FE) layer connected to the first MOS transistor, a second MOS transistor on the substrate, and a second FE layer connected to the second MOS transistor. Notably, the first FE layer and the second FE layer have different capacitance, which enhances the device's functionality.
Career Highlights
Chung-Hsing Lin is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further develop his innovative ideas and contribute to cutting-edge technology.
Collaborations
Chung-Hsing Lin has collaborated with talented individuals such as Kung-Hong Lee and Mu-Kai Tsai. These collaborations have fostered a creative environment that encourages the exchange of ideas and advancements in semiconductor technology.
Conclusion
Chung-Hsing Lin's contributions to the field of semiconductor devices exemplify the importance of innovation in technology. His patent and work at United Microelectronics Corporation highlight his role as a key figure in advancing semiconductor technology.