The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Dec. 27, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 49/02 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/82345 (2013.01); H01L 21/823842 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 28/55 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device preferably includes: a first metal-oxide semiconductor (MOS) transistor on a substrate; a first ferroelectric (FE) layer connected to the first MOS transistor; a second MOS transistor on the substrate; and a second FE layer connected to the second MOS transistor. Preferably, the first FE layer and the second FE layer include different capacitance.