This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations of Chung-Hao Su in Semiconductor Technology
Introduction
Chung-Hao Su is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method that enhances the functionality of semiconductor devices.
Latest Patents
Chung-Hao Su holds a patent for a "Method of forming opening in passivation layer and structures thereof." This patent describes a semiconductor device and method that includes depositing a passivation layer over an upper contact feature. In some embodiments, a polyimide (PI) layer is formed over the passivation layer. The PI layer is patterned to create a first opening that exposes a portion of the passivation layer over the upper contact feature. Additionally, one or more etching processes are performed to form a second opening that reveals the top surface of the upper contact feature. These processes also etch the passivation layer through the first opening to create a patterned passivation layer.
Career Highlights
Chung-Hao Su is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to contribute to cutting-edge technologies that are essential for modern electronic devices.
Collaborations
Chung-Hao Su has collaborated with Hsing-Hsiang Wang, further enhancing the innovative efforts within their field. Their partnership exemplifies the importance of teamwork in advancing semiconductor technology.
Conclusion
Chung-Hao Su's contributions to semiconductor technology through his patent and work at Taiwan Semiconductor Manufacturing Company Limited highlight his role as an influential inventor. His innovative methods continue to shape the future of semiconductor devices.