The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2026
Filed:
May. 23, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chung-Hao Su, Hsinchu City, TW;
Wen-Chiung Tu, New Taipei City, TW;
Hsing-Hsiang Wang, Hsinchu, TW;
Chen-Chiu Huang, Taichung City, TW;
Hsiang-Ku Shen, Hsinchu City, TW;
Dian-Hau Chen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device and method including depositing a passivation layer over an upper contact feature. In some embodiments, a polyimide (PI) layer is formed over the passivation layer. In an example, the PI layer is patterned to form a patterned PI layer including a first opening that exposes a portion of the passivation layer over the upper contact feature. In an embodiment, one or more etching processes are performed to form a second opening that exposes a top surface of the upper contact feature. In some embodiments, the one or more etching processes etches the passivation layer through the first opening to form a patterned passivation layer. In some examples, the one or more etching processes also recesses sidewall surfaces of the patterned PI layer from corners of the patterned passivation layer defined along opposing surfaces of the second opening.