Hubei, China

Chunfei Deng


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Chunfei Deng in Three-Dimensional Memory Devices.

Introduction

Chunfei Deng is a notable inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly in three-dimensional memory devices. His innovative work has led to the development of a unique method for input/output voltage training, which is crucial for enhancing the performance of these advanced memory systems.

Latest Patents

Chunfei Deng holds a patent for an "Input/output reference voltage training method in three-dimensional memory devices." This patent outlines a method that includes several key operations. The process begins with setting a reference voltage value at an on-die termination (ODT) enabled status. It then involves controlling the 3D memory device to perform a write training process. The method further includes determining whether additional write training is necessary. If further training is required, the initial operations are repeated. If not, the reference voltage is set as an optimized value. This innovative approach enhances the efficiency and reliability of three-dimensional memory devices.

Career Highlights

Chunfei Deng is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this leading technology company has positioned him as a key player in the development of advanced memory solutions. His expertise in voltage training methods has contributed to the company's reputation for innovation in the memory device sector.

Collaborations

Chunfei Deng collaborates with various professionals in his field, including his coworker Yan Lu. Their combined efforts in research and development have led to advancements in memory technology, further solidifying their contributions to the industry.

Conclusion

Chunfei Deng's innovative work in three-dimensional memory devices showcases his expertise and commitment to advancing technology. His patent for input/output voltage training methods represents a significant step forward in memory device performance. His contributions continue to influence the field and inspire future innovations.

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