The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2025

Filed:

Sep. 02, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Hubei, CN;

Inventors:

Shiyang Yang, Hubei, CN;

Chunfei Deng, Hubei, CN;

Yan Lu, Hubei, CN;

Ling Ding, Hubei, CN;

Xiang Fu, Hubei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/50 (2006.01); G11C 5/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 5/04 (2013.01);
Abstract

Methods for input/output voltage training of a three-dimensional (3D) memory device is disclosed. The method can comprise the following operations: (1) setting a reference voltage value at an on-die termination (ODT) enabled status; (2) controlling the 3D memory device to perform a write training process; (3) determining whether a further write training process is needed; (4) in response to determining that the further write training process is needed, repeating operations (1), (2) and (3); and (5) in response to determining that the further write training process is not needed, setting the reference voltage value as an optimized reference voltage value.


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