Chun-Ning Wu

Title: Innovations of Chun-Ning Wu

Introduction

Chun-Ning Wu is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of high-voltage devices, showcasing his expertise through his innovative patent.

Latest Patents

Chun-Ning Wu holds a patent for a high-voltage device and method for fabricating the same. This invention includes a semiconductor substrate, a source diffusion region, a drain diffusion region, a channel diffusion region, and a gate electrode. The design features a source diffusion region and a drain diffusion region with a first conductive type, both situated within the semiconductor substrate. The channel diffusion region is strategically placed between the source and drain diffusion regions. Additionally, the gate dielectric layer is positioned on the channel diffusion region, incorporating a first modified portion with a second conductive type that extends inwards from the first edge of the gate dielectric layer. The gate electrode is placed on the gate dielectric layer, ensuring that the first modified portion, the gate electrode, and the channel diffusion region at least partially overlap.

Career Highlights

Chun-Ning Wu is associated with United Microelectronics Corporation, where he applies his skills and knowledge in semiconductor technology. His work has contributed to advancements in high-voltage device fabrication, enhancing the performance and efficiency of electronic components.

Collaborations

Chun-Ning Wu has collaborated with notable colleagues, including Chih-Mou Lin and Chin-Chia Kuo. These partnerships have fostered innovation and development in their respective fields.

Conclusion

Chun-Ning Wu's contributions to high-voltage device technology exemplify his innovative spirit and dedication to advancing semiconductor technology. His patent reflects a significant achievement in the field, showcasing his expertise and commitment to innovation.