Tainan, Taiwan

Chun Juang Lin

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chun Juang Lin. Retrieved from https://idiyas.com/inventor/chun-juang-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Innovations of Chun Juang Lin

Introduction

Chun Juang Lin is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in memory elements. His innovative work has led to the development of a unique multi-transistor non-volatile memory element.

Latest Patents

Chun Juang Lin holds a patent for a multi-transistor non-volatile memory element. This invention includes a substrate, a first floating gate disposed on the substrate, a second floating gate coupled to the first floating gate, and a first active region in the substrate that is coupled to both floating gates. This technology has the potential to enhance memory storage capabilities in electronic devices.

Career Highlights

Chun Juang Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to further his research and development in advanced memory technologies.

Collaborations

Chun Juang Lin collaborates with Shih Wei Wang, a talented female engineer. Their partnership exemplifies the importance of teamwork in driving innovation within the technology sector.

Conclusion

Chun Juang Lin's contributions to the field of semiconductor technology, particularly through his patented multi-transistor non-volatile memory element, highlight his role as a key innovator in the industry. His work continues to influence advancements in memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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