The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2013
Filed:
Aug. 01, 2011
Applicants:
Shih Wei Wang, Hsin-Chu, TW;
Chun Juang Lin, Hsin-Chu, TW;
Inventors:
Shih Wei Wang, Hsin-Chu, TW;
Chun Juang Lin, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacting Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present disclosure provides a multi-transistor element including a substrate, a first floating gate disposed on the substrate, a second floating gate disposed on the substrate and coupled to the first floating gate, and a first active region disposed in the substrate and coupled to the first and second floating gates.
Wang, Shih. (2013). Multi-transistor non-volatile memory element (U.S. Patent No. 8557658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8557658
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile