This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Chulkwon Park: Innovator in Memory Core Circuit Technology
Introduction
Chulkwon Park is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of memory technology, particularly with his innovative designs that enhance memory core circuits. His work is recognized for its technical sophistication and practical applications in modern electronics.
Latest Patents
Chulkwon Park holds a patent for a "Memory core circuit having cell on periphery (CoP) structure and memory device including the same." This patent describes a memory core circuit that includes a memory cell array composed of sub cell arrays and a core control circuit featuring sub peripheral circuits located beneath the sub cell arrays. The design strategically divides the sub peripheral circuits into first and second column edge regions and a central region, optimizing the functionality of the memory device.
Career Highlights
Chulkwon Park is currently employed at Samsung Electronics Ltd., a leading global technology company. His role involves the development and enhancement of memory technologies, where he applies his expertise to create innovative solutions that meet the demands of the electronics market. His contributions have been instrumental in advancing the capabilities of memory devices.
Collaborations
Chulkwon Park has collaborated with talented colleagues such as Sanghoon Jung and Yeongwoo Kang. Together, they have worked on various projects that push the boundaries of memory technology and contribute to the success of their team at Samsung Electronics.
Conclusion
Chulkwon Park is a distinguished inventor whose work in memory core circuit technology has made a significant impact in the field. His innovative designs and collaborations with fellow engineers continue to drive advancements in memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile