Chuanhai Shan

Title: Chuanhai Shan: Innovator in 3D Memory Technology

Chuanhai Shan is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory devices, particularly in the development of three-dimensional (3D) NAND memory technologies. His innovative work has the potential to enhance data storage capabilities in various electronic devices.

Latest Patents

Chuanhai Shan holds a patent for a three-dimensional (3D) memory device and its fabrication method. This patent outlines a fabrication method that includes forming a semiconductor layer over a substrate, creating an opening that extends partially through the semiconductor layer, and depositing a first and second stack layer that are alternately stacked over the sidewall of the opening and over the semiconductor layer. The process concludes with filling the opening with a dielectric material to form an alignment mark. This invention represents a significant advancement in memory technology.

Career Highlights

Chuanhai Shan is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to work on cutting-edge technologies that are shaping the future of memory storage solutions. His expertise in semiconductor fabrication and memory device design has positioned him as a key player in the industry.

Collaborations

Chuanhai Shan collaborates with talented individuals in his field, including coworkers Zhaosong Li and Zhouyang Lu. Their combined efforts contribute to the innovative projects at Yangtze Memory Technologies Co., Ltd.

Conclusion

Chuanhai Shan's contributions to the field of 3D memory technology exemplify the importance of innovation in advancing electronic storage solutions. His patent and ongoing work at Yangtze Memory Technologies Co., Ltd. highlight his role as a leading inventor in this dynamic industry.