Le Touvet, France

Christophe Borean

USPTO Granted Patents = 3 

 

Average Co-Inventor Count = 2.3

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2015-2021

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3 patents (USPTO):Explore Patents

Title: The Innovative Mind of Christophe Borean

Introduction

Christophe Borean is a notable inventor based in Le Touvet, France. He has made significant contributions to the field of chemical vapor deposition (CVD) technology. With a total of 3 patents to his name, Borean's work is recognized for its innovative approaches and practical applications.

Latest Patents

One of Borean's latest patents is a treatment chamber for a chemical vapor deposition (CVD) reactor. This treatment chamber is designed to operate under partial vacuum and includes a system for injecting reactive species onto a substrate. It features a thermal control system that regulates the temperature of the injection system, ensuring optimal conditions for deposition. Additionally, the chamber incorporates a thermal transfer zone that is insulated from the enclosure, enhancing its efficiency. Another significant patent involves a reactor device for chemical vapor deposition, which includes a reaction chamber with a purge gas inlet and a gas discharge channel. This design allows for effective heat exchange and improved performance during CVD processes.

Career Highlights

Throughout his career, Christophe Borean has worked with various companies, including Altatech Semiconductor. His expertise in CVD technology has positioned him as a valuable asset in the semiconductor industry.

Collaborations

Borean has collaborated with notable professionals in his field, including Patrice Nal and Jean-Luc Delcarri. Their combined efforts have contributed to advancements in CVD technology and its applications.

Conclusion

Christophe Borean's innovative contributions to chemical vapor deposition technology highlight his role as a leading inventor in the field. His patents reflect a commitment to enhancing the efficiency and effectiveness of CVD processes.

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