Altatech Semiconductor

Other

Kobus Sas

Christophe Borean

Patrice Nal

Julien Vitiello

Jean-Luc Delcarri

Treatment chamber (C) for a chemical vapor deposition (CVD) reactor, comprising, within a body (B) defining an enclosure (E) under partial vacuum, a system () for injecting reactive species with a view to being deposited on a substrate () placed on a support element (), and a thermal control system () for regulating the temperature of the injection system () or keeping it substantially constant, this thermal control system () having an interface zone (ZI) with the injection system (). The treatment chamber (C) further comprises, in the interface zone (ZI), at least one thermal transfer zone (ZT) that is (i) insulated from the enclosure under partial vacuum (E) by an insulating barrier to the pressure and to the diffusion of contaminating species and (ii) filled with a thermal interface material (). Application for carrying out CVD depositions, especially pulsed CVD depositions.

Treatment chamber for a chemical vapour deposition (CVD) reactor and thermalization process carried out in this chamber

A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to the reaction chamber via a circumferential opening in the inner wall of the chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. The inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example, fins.

Chemical vapor deposition device

Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.

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Le Touvet, France

Christophe Borean