Yongin, South Korea

Choongho Lee

This inventor holds 5 USPTO granted patents. Top assignees: Samsung Electronics Co., Ltd., Samsung Display Co., Ltd.. Active years: 2015-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Choongho Lee. Retrieved from https://idiyas.com/inventor/choongho-lee-z95vagsz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 41(Granted Patents)


Location History:

  • Hwaseong-si, KR (2016)
  • Yongin-si, KR (2015 - 2017)

Company Filing History:


Years Active: 2015-2017

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5 patents (USPTO):Explore Patents

Title: Innovations of Choongho Lee in Semiconductor Technology

Introduction

Choongho Lee is a prominent inventor based in Yongin, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on advancing semiconductor devices and their manufacturing processes.

Latest Patents

One of Choongho Lee's latest patents involves semiconductor devices having silicide and methods of manufacturing the same. This innovation includes semiconductor devices with dual silicides, featuring a first fin with N-type impurities and a second fin with P-type impurities on a substrate. The design incorporates a first gate electrode and a first source/drain area on the first fin, along with a second gate electrode and a second source/drain area on the second fin. An etch stop layer is positioned on both source/drain areas, with an insulating layer above it. Additionally, a first plug connected to the first source/drain area and a second plug connected to the second source/drain area are formed through the insulating layer and the etch stop layer. The patent also describes a first metal silicide layer in the first source/drain area and a second metal silicide layer, differing in material and thickness, in the second source/drain area.

Another notable patent by Choongho Lee details a method of fabricating fin-field effect transistors (finFETs) with varying fin widths. This method includes preparing a substrate with distinct regions, forming fin portions that protrude from the substrate, and adjusting the widths of the fin portions in one of the regions.

Career Highlights

Choongho Lee has worked with leading companies in the technology sector, including Samsung Electronics Co., Ltd. and Samsung Display Co., Ltd. His experience in these organizations has allowed him to contribute to cutting-edge advancements in semiconductor technology.

Collaborations

Throughout his career, Choongho Lee has collaborated with notable colleagues such as Chang Woo Oh and Shincheol Min. These partnerships have fostered innovation and development in the semiconductor field.

Conclusion

Choongho Lee's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor devices and manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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