The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2017
Filed:
Dec. 15, 2015
Hyungjong Lee, Osan-si, KR;
Wei-hua Hsu, Seongnam-si, KR;
Junggun You, Ansan-si, KR;
Choongho Lee, Yongin-si, KR;
Hyungjong Lee, Osan-si, KR;
Wei-Hua Hsu, Seongnam-si, KR;
Junggun You, Ansan-si, KR;
Choongho Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Semiconductor devices, having dual silicides, include a first fin, having N-type impurities, and a second fin, having P-type impurities, on a substrate. A first gate electrode and a first source/drain area are on the first fin. A second gate electrode and a second source/drain area are on the second fin. An etch stop layer is on the first source/drain area and the second source/drain area. An insulating layer is on the etch stop layer. A first plug connected to the first source/drain area and a second plug connected to the second source/drain area are formed through the insulating layer and the etch stop layer. A first metal silicide layer is in the first source/drain area. A second metal silicide layer having a material different from the first metal silicide layer and having a thickness smaller than the first metal silicide layer is in the second source/drain area.