The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Feb. 02, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Chang Woo Oh, Suwon-si, KR;
Shincheol Min, Seoul, KR;
Jongwook Lee, Yongin-si, KR;
Choongho Lee, Hwaseong-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 21/02107 (2013.01); H01L 21/302 (2013.01); H01L 21/3086 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/66477 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01);
Abstract
Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.