Chiung-Ting Ou

Title: Chiung-Ting Ou: Innovator in Memory Device Technology

Introduction

Chiung-Ting Ou is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 8 patents. His work focuses on innovative memory solutions that enhance performance and efficiency.

Latest Patents

Chiung-Ting Ou's latest patents include a one-time programmable memory device featuring an anti-fuse element. This memory device comprises a transistor, an anti-fuse element, a source/drain contact, a first gate via, and a second gate via. The transistor is positioned over a substrate, while the anti-fuse element is connected to the transistor in series. The design also includes a source/drain contact linked to the transistor's source/drain region. Another notable patent is a one-time programmable memory device that includes an anti-fuse element and a manufacturing method. This device features a transistor with a fin structure and a first gate structure across it, along with an anti-fuse element that includes the fin structure and a second gate structure.

Career Highlights

Chiung-Ting Ou is currently employed at Taiwan Semiconductor Manufacturing Company Limited, where he continues to innovate in the field of semiconductor technology. His expertise in memory devices has positioned him as a key player in the industry.

Collaborations

Throughout his career, Chiung-Ting Ou has collaborated with notable colleagues, including Ming-Yih Wang and Jian-Hong Lin. These partnerships have contributed to the advancement of memory device technologies.

Conclusion

Chiung-Ting Ou's contributions to memory device technology are noteworthy, with a strong portfolio of patents that reflect his innovative spirit. His work continues to influence the semiconductor industry, showcasing the importance of advancements in memory solutions.